| RefNo | EC/1992/16 |
| Level | Item |
| Title | Comber, Peter George Le: certificate of election to the Royal Society |
| Date | 1986 |
| Description | Citation typed |
| Citation | Distinguished for his outstanding work on the physics and applications of amorphous semiconductors. In collaboration with the proposer he showed in 1975 that amorphous silicon and germanium, prepared by the decomposition of the gaseous hydride in a glow discharge plasma, can be doped substitutionally giving a wide-ranging control over the electronic properties of the material. This work has opened up promising new fields for fundamental research and also formed the basis for world-wide industrial developments of a-Si electronic devices, notably large area photovoltaic junctions for solar energy conversion. An important personal achievement of the candidate has been the determination of the localised state distribution in an amorphous semiconductor which is central to the understanding of the properties of non-crystalline materials. In further developments of the field effect approach he designed and investigated arrays of a-Si field effect transistors for addressable liquid crystal displays, now being produced in Japan and the U.S.
LeComber is the author or co-author of over 100 papers, reviews and invited contributions to major Conferences. He is a Fellow of the Royal Society of Edinburgh and his achievements have been recognised by the award of the 1984 Duddell Medal and Prize of the Institute of Physics and the 1981/82 Maxwell Premium of the I.E.E. |
| AccessStatus | Closed |
Fellows associated with this archive
| Code | PersonName | Dates |
| NA2688 | Comber; Peter George Le (1941 - 1992) | 1941 - 1992 |