| RefNo | EC/1980/30 |
| Previous numbers | Cert XX, 207 |
| Level | Item |
| Title | Roberts, Sir Derek Harry: certificate of election to the Royal Society |
| Date | 1975 |
| Description | Citation typed. Letter confirming birthplace attached |
| Citation | Derek Harry Roberts is Director of the Allen Clark Research Centre, Caswell, Northamptonshire - the central research laboratories of the Plessey Company Ltd.
Following some work during the period 1953-1956 on infra-red photo-conductive and galvanomagnetic properties of lead selenide, indium antimonide and indium arsenide, Roberts has made very significant contributions to the advancement of solid state device technology. In particular, he was responsible for the first complex linear integrated circuits, production of which began at Plessey in 1963. Other successes of the solid state group at the Allen Clark Laboratory due to Roberts have been the development of FeSi2 for thermoelectric devices, the AsCl3 process for the growth of high purity epitaxial GaAs (1963) now adopted worldwide, and the GaAs field effect transistor. In 1974 his advanced shallow function bipolar process - Process III - won the Queen's Award for Innovation.
Roberts now manages both Plessey's Memory System and Semiconductor businesses, in addition to his responsibility for the Allen Clark Research Centre. |
| Extent | 2 sheets |
| AccessStatus | Closed |
Fellows associated with this archive
| Code | PersonName | Dates |
| NA4747 | Roberts; Sir; Derek Harry (1932 - 2021); engineer | 1932 - 2021 |