| Citation | Distinguished for his use of micro-electronics technology for the investigation of basic problems of solid state physics. Using the silicon inversion layer he was the first to verify in detail the theory of the Anderson transition in non-crystalline systems. From analysis of his experiments he showed that localized electrons enhance the random field producing localization, In addition, the existence and nature of electron localization has been used to obtain information about the Si - SiO2 interface. This work has improved our understanding of charged defects in the SiO2 near the interface and their relation to silicon device instabilities.
He has developed the use of magnetic localization as an experimental technique, and has shown, by the use of suitable structures, that a metal-insulator transition induced by a magnetic field can be observed in both three and two dimensions within the same specimen. This technique has been used to explore two dimensional localization within impurity bands.
In general he has been prominent in developing a field of experimental physics relating to electrons in random fields, using semiconductor devices not previously used for this purpose. |