| RefNo | EC/1998/25 |
| Level | Item |
| Title | Newman, Ronald Charles: certificate of election to the Royal Society |
| Date | 1991 |
| Description | Citation typed |
| Citation | Professor Newman is distinguished for his pioneering work on the epitaxial growth of thin films and subsequent outstanding contributions to our understanding of impurity behaviour in semiconductors. His early electron diffraction studies of electrodeposited metals on either metallic or non-metallic substrates enabled prior claims of pseudomorphic growth to be discounted and provided the foundation to his recent important fundamental studies of the growth of semiconductors by MBE. He began his researches on semiconductor physics at the AEI Fundamental Research Laboratory at Aldermaston and is now particularly renowned for his many and varied studies of point-defect centres and their interactions with extended defects. For example, he was the first to use infra-red methods to identify and characterise the vibrational spectrum of carbon as an important substitutional impurity in silicon. He was the first to demonstrate directly the segregation of impurities such as carbon and oxygen to dislocations in semi-conductors, work which subsequently led to a series of seminal papers (both theoretical and experimental) on the interactions of point-defects with dislocations. He is currently directing an extensive programme of research at the London IRC in semiconductors. |
| AccessStatus | Closed |
Fellows associated with this archive
| Code | PersonName | Dates |
| NA485 | Newman; Ronald Charles (1931 - 2014) | 1931 - 2014 |